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InnoLas laser marking device for wafers

The laser light source developed by InnoLas for wafer marking achieves a low running cost that can be maintained for about 10 years (based on actual data).

Markable wafer materials: Silicon (Si), Germanium (Ge), Sapphire (Al2O3), Lithium Tantalate (LiTaO3), Lithium Niobate (LiNbO3), Gallium Arsenide (GaAs), Gallium Nitride (GaN), Silicon Carbide (SiC), Indium Phosphide (InP), glass, etc. To accommodate various wafer materials, we offer the following lasers: - UV (355nm), Green (532nm), IR (1064nm), IR, Carbon Dioxide (10.6μm). Options: - Motorized Beam Expander (MBE): Adjusts beam diameter, focal position, etc., according to recipe data. - Power Consumption Display Panel (DCM): Aggregates and displays line power supply, Galvo voltage/temperature, compressed air pressure, etc., in one location. - Additionally, we offer a variety of user-friendly options.

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  • Laser marker

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